强激光与粒子束2026，Vol.38Issue(11)：187-192,6.DOI:10.11884/HPLPB202638.260157
掺钒半绝缘4H-SiC光导开关皮秒响应特性研究
Investigation of the picosecond response in vanadium-doped semi-insulating 4H-SiC photoconductive switches
刘京亮 1陈湘锦 1张一尘 1倪涛 1厉志强 1许春良1
作者信息
- 1. 中国电子科技集团公司 第十三研究所,石家庄 050051
- 折叠
摘要
Abstract
[Background]Photoconductive semiconductor switches are key optically triggered devices for high-frequency and high-power pulsed systems,in which kilovolt-level output,high voltage conversion efficiency,and sub-nanosecond response must be achieved simultaneously.Vanadium-doped semi-insulating 4H-SiC is particularly attractive for such switches because of its wide bandgap,high critical electric field,and suitability for fast high-voltage switching.However,the picosecond response of planar SiC photoconductive switches is strongly affected by the electrode geometry,optical excitation energy,and applied bias voltage.[Purpose]Here we report a planar photoconductive semiconductor switch fabricated on a vanadium-doped semi-insulating 4H-SiC substrate with a partially asymmetric electrode configuration,and evaluate its picosecond photoelectric response under different gap-width,laser-energy,and bias-voltage conditions.[Methods]Planar 4H-SiC photoconductive switch devices with different electrode gaps were fabricated and characterized.Their transient output voltage,voltage conversion efficiency,and rise time were measured under varied laser energies and bias voltages to assess the dependence of switching performance on device structure and operating conditions.[Results]For the device with a 0.7 mm electrode gap,a maximum voltage conversion efficiency of approximately 81.6%was obtained at a bias voltage of 2 kV and a laser energy of 1.2 mJ,with a rise time of 229 ps.When the bias voltage was increased to 10 kV at the same laser energy,the device generated a maximum output voltage of 8.16 kV while maintaining a rise time of 241 ps.[Conclusions]These results demonstrate that the vanadium-doped semi-insulating 4H-SiC planar photoconductive switch can provide efficient kilovolt-level pulse conversion with a picosecond-scale response.The proposed device structure offers a promising solid-state switching approach for compact,fast-response,high-power pulsed generation systems.关键词
碳化硅/光导开关/高压脉冲/掺钒半绝缘Key words
silicon carbide/photoconductive semiconductor switch/high-voltage pulse/vanadium-doped semi-insulating分类
信息技术与安全科学引用本文复制引用
刘京亮,陈湘锦,张一尘,倪涛,厉志强,许春良..掺钒半绝缘4H-SiC光导开关皮秒响应特性研究[J].强激光与粒子束,2026,38(11):187-192,6.
