东华大学学报（英文版）2026，Vol.43Issue(4)：26-33,8.DOI:10.19884/j.1672-5220.202503001
基底温度对等离子体射流制备类SiO2薄膜的影响
Effect of Substrate Temperature on Preparation of SiO2-like Thin Films by Plasma Jet
摘要
Abstract
This study explores the effects of the substrate temperature(25-200℃)on SiO2-like thin films prepared via atmospheric-pressure plasma jet.Films deposited at elevated temperatures exhibited a reduced thickness(from 242 to 156 nm)but enhanced mechanical and chemical performance.The pencil hardness improved from grade B to 4H.The adhesion reached class 0(no detachment)at temperatures of 100℃and above.X-ray photoelectron spectroscopy(XPS)confirmed carbon reduction and silicon dioxide(SiO2)enrichment when the substrate temperature increased from 25 to 200℃,indicating intensified precursor decomposition.Hydrochloric acid corrosion testing(3.0 h immersion)revealed that the films deposited at 200℃exhibited improved corrosion resistance,with a mass loss of 6.53％compared to 7.01％for the bare substrates.The results indicate that the substrate temperature is a critical process parameter for preparing protective films applied in corrosive environments.关键词
大气压等离子体射流/放电/薄膜/基底温度/耐腐蚀性能/SiO2Key words
atmospheric-pressure plasma jet/discharge/thin film/substrate temperature/corrosion resistance/SiO2分类
数理科学引用本文复制引用
张娇娇,徐雨,钱智欣,黄晓江..基底温度对等离子体射流制备类SiO2薄膜的影响[J].东华大学学报（英文版）,2026,43(4):26-33,8.基金项目
National Outstanding Youth Science Foundation,China(No.12205040) （No.12205040）
