电子学报2026，Vol.54Issue(5)：2054-2060,7.DOI:10.12263/DZXB.20260325
金刚石表面损伤层及其对外延金刚石性能的影响研究
Study on the Surface Damage Layer of Diamond and Its Influence on the Performance of Epitaxial Diamond
程奕赫 1马孟宇 1刘庆彬 1何泽召 1蔚翠 1冯志红1
作者信息
- 1. 中国电子科技集团公司第十三研究所,河北石家庄 050051||固态微波器件与电路全国重点实验室,河北石家庄 050051
- 折叠
摘要
Abstract
Hydrogen-terminated diamond-induced two-dimensional hole gas is an important pathway for achieving semiconductor behavior in diamond.Mechanical polishing,as a key process in the preparation of diamond substrates,inevi-tably introduces a subsurface damage layer,leading to surface lattice distortion and increased defect density.During selec-tive etching in hydrogen plasma treatment,it causes deterioration of surface morphology and an increase in roughness,sig-nificantly suppressing the transport properties of the two-dimensional hole gas and limiting the electrical performance and device applications of hydrogen-terminated diamond.This study focuses on(001)-oriented chemical vapor deposition single-crystal diamond substrates.By controlling the inductively coupled plasma(ICP)etching time,the subsurface damage layer can be removed,and the effects of ICP etching time on diamond surface morphology,damage layer structure,and hydrogen-terminated electrical properties were systematically investigated.The results show that with increased ICP etching time,the etching pits and scratches on the hydrogen-treated sample surfaces gradually disappear,and surface deterioration is effective-ly suppressed.Transmission electron microscopy reveals that polished diamond has a subsurface damage layer of about 80 nm,which can be almost completely removed after 15 minutes of ICP etching,leaving only a surface reconstruction layer of approximately 1.5 nm.Moreover,as the damage layer is gradually removed,the carrier concentration of hydrogen-terminated diamond decreases from 1.16×1013/cm2 to 5.3×1012/cm2,while mobility increases from 66.3 cm2/(V·s)to 98.3 cm2/(V·s).Further homoepitaxial growth on the damage layer-removed samples produced a low-defect,high-purity diamond epitaxial layer,with mobility further increased to 122 cm2/(V·s).This study clarifies the regulation of hydrogen-terminated diamond electrical performance through ICP etching removal of the subsurface damage layer and provides theoretical and experimen-tal references for optimizing the surface quality and electrical characteristics of hydrogen-terminated diamond.关键词
单晶金刚石/同质外延/氢终端/电感耦合等离子体刻蚀/损伤层/电特性Key words
single-crystal diamond/homoepitaxy/hydrogen terminal/inductively coupled plasma etching/damage layer/electrical properties分类
信息技术与安全科学引用本文复制引用
程奕赫,马孟宇,刘庆彬,何泽召,蔚翠,冯志红..金刚石表面损伤层及其对外延金刚石性能的影响研究[J].电子学报,2026,54(5):2054-2060,7.
