红外技术2026，Vol.48Issue(9)：1058-1063,6.
3D结构AlN MSM紫外探测器
3D AlN Metal-Semiconductor-Metal Structure UV Detector
摘要
Abstract
To investigate the performance enhancement of AlN-based MSM photoelectric devices using three-dimensional(3D)structures with AlN as the light-absorption layer material,a 3D structure was introduced by etching the AlN layer based on the traditional MSM photoelectric device.A 3D-structured MSM device(3D-MSM)was designed and fabricated,and its photoelectric performance was tested and analyzed.According to the test results,the photoelectric performance of the 3D-MSM device was significantly better than that of the MSM device.Specifically,the 3D-MSM device with an etching depth of 1 μm achieved a photoresponsivity of 8.2 mA/W,which is a 26.1%increase in photoresponsivity,52%increase in photocurrent,and 26.7%reduction compared with the MSM device.In addition,the 3D structure devices array was used to prepare and test the ultraviolet detectors,and the device array had good imaging functions for different shapes and patterns.关键词
金属-半导体-金属/紫外光电器件/三维结构/光响应度Key words
metal-semiconductor-metal/UV photodetector/three-dimensional structure/photoresponsivity分类
信息技术与安全科学引用本文复制引用
李滔,秦文龙,饶浩勇,宋文青..3D结构AlN MSM紫外探测器[J].红外技术,2026,48(9):1058-1063,6.基金项目
湖南省自然科学基金项目(2024JJ6197) （2024JJ6197）
湖南省自然科学基金项目(2024JJ7495) （2024JJ7495）
邵阳学院研究生科研创新项目(CX2024SY048) （CX2024SY048）
湖南省教育厅科学研究项目(24B0698). （24B0698）
