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Ultra-scaled MoS2 transistor towards 1-nm-node electronics

Honglin Song Jie Jiang

极端制造（英文）2026，Vol.8Issue(4)：13-16,4.

极端制造（英文）2026，Vol.8Issue(4)：13-16,4.DOI:10.1088/2631-7990/ae5b8b

Ultra-scaled MoS2 transistor towards 1-nm-node electronics

Honglin Song ¹Jie Jiang¹

作者信息

1. Hunan Key Laboratory of Nanophotonics and Devices,Hunan Key Laboratory of Super Microstructure and Ultrafast Process,School of Physics,Central South University,Changsha 410083,People's Republic of China||State Key Laboratory of Precision Manufacturing for Extreme Service Performance,College of Mechanical and Electrical Engineering,Central South University,Changsha 410083,People's Republic of China
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摘要

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Honglin Song,Jie Jiang..Ultra-scaled MoS2 transistor towards 1-nm-node electronics[J].极端制造（英文）,2026,8(4):13-16,4.

基金项目

This work is supported by the Hunan Science Fund for Distinguished Young Scholars(2023JJ10069),the National Natural Science Foundation of China(52172169),the Fundamental Research Funds for the Central Universities of Central South University(Grant No.2025ZZTS0613),and the Project of State Key Laboratory of Precision Manufacturing for Extreme Service Performance,Central South University(ZZYJKT2024-02). （2023JJ10069）

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