极端制造（英文）2026，Vol.8Issue(4)：83-130,48.DOI:10.1088/2631-7990/ae51d1
Emerging 2D ferroelectric materials for neuromorphic computing:progress,challenges,and opportunities
Emerging 2D ferroelectric materials for neuromorphic computing:progress,challenges,and opportunities
Yue Gong 1Shuyu Fan 2Xuechao Xing 3Xingli Wang 4Tay Beng Kang4
作者信息
- 1. School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore||Interdisciplinary Graduate School,Nanyang Technological University,Singapore 639798,Singapore
- 2. School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore||School of Mechanical & Automotive Engineering,South China University of Technology,Guangzhou 510641,People's Republic of China
- 3. School of Materials Science and Engineering,Nanyang Technological University,Singapore 639798,Singapore
- 4. School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore||IRL3288 CINTRA(CNRS-International NTU THALES Research Alliances),Nanyang Technological University,Singapore 637553,Singapore
- 折叠
摘要
关键词
2D ferroelectrics/neuromorphic computing/in-memory computing/ferroelectric device/synaptic electronicsKey words
2D ferroelectrics/neuromorphic computing/in-memory computing/ferroelectric device/synaptic electronics引用本文复制引用
Yue Gong,Shuyu Fan,Xuechao Xing,Xingli Wang,Tay Beng Kang..Emerging 2D ferroelectric materials for neuromorphic computing:progress,challenges,and opportunities[J].极端制造（英文）,2026,8(4):83-130,48.基金项目
This work is supported by the Ministry of Education,Singapore(Tier 1 project RG87/24). （Tier 1 project RG87/24）
