苏州科技大学学报(自然科学版)2026,Vol.43Issue(3):1-13,13.DOI:10.12084/j.issn.2096-3289.2026.03.001
氩离子辅助轰击诱导氧化物界面二维电子气的物性与器件研究
Research on the properties and devices of two-dimensional electron gas at oxide interfaces induced by AIBA bombardment
摘要
Abstract
Traditional oxide interface two-dimensional electron gases(2DEGs)face challenges in preparation,in-cluding difficulty in controlling interface defects,high complexity in hetero-integration processes,and insufficient optoelectronic response at room temperature.This paper systematically presents the argon ion beam assisted bombard-ment(AIBA)technique for inducing quasi-two-dimensional electron gases(Q2DEGs)on oxide surfaces such as SrTiO ₃ and KTaO ₃,along with the underlying mechanisms for tuning their physical properties.First,we explained the physical principles by which AIBA enables optimization of surface defects and carrier concentration through pre-cise control of parameters such as bombardment energy,duration,and beam density.Then,we presented a strategy for fabricating van der Waals heterostructures(vdWHs)based on Q2DEGs,and conducted an in-depth analysis of their carrier transport behavior,spin-orbit coupling characteristics,and multi-state non-volatile memory effects us-ing low temperature transport measurements and broadband optoelectronic response characterization.Finally,we summarized the unique advantages of this system under synergistic multi-field(magnetic-electric-optical)control and discussed its potential applications in high-performance optoelectronic devices,quantum memory,and spintron-ics.关键词
氩离子辅助轰击/二维电子气/光电子器件/非易失性存储器/多场调控Key words
argon ion beam assisted bombardment/two-dimensional electron gas/optoelectronic devices/non-volatile memory/multi-field control分类
数理科学引用本文复制引用
姜昱丞,张璘铃,张越..氩离子辅助轰击诱导氧化物界面二维电子气的物性与器件研究[J].苏州科技大学学报(自然科学版),2026,43(3):1-13,13.基金项目
国家自然科学基金面上项目(12274316) (12274316)
江苏省自然科学基金杰出青年基金项目(BK20240048) (BK20240048)