现代应用物理2026，Vol.17Issue(4)：1-23,23.DOI:10.12061/j.issn.2095-6223.202605027
纳秒至皮秒级脉冲功率半导体开关器件机理与技术进展
Operating Mechanisms and Technological Advances of Nanosecond-Picosecond-Scale Pulsed Power Semiconductor Switching Devices
摘要
Abstract
This paper surveys special-purpose semiconductor switching devices for pulsed-power systems,specifically drift step recovery diodes(DSRDs),reverse-blocking diode thyristors(RBDTs),fast ionization dynistors(FIDs),and avalanche bipolar junction transistors(ABJTs).Collectively,these four classes encompass both closing-and opening-switch functions and span silicon(Si)and silicon carbide(SiC)material platforms,constituting a representative device family for nanosecond-to picosecond-scale fast-front pulsed-power technologies.Under operating conditions characterized by short pulse widths and high voltage and current slew rates(dv/dt and di/dt),these devices exploit their distinctive physical mechanisms to play critical roles in applications such as fast-front pulse generation and high-current discharge.Focusing on these four device classes,this review summarizes their switching mechanisms,device structures,and key enabling technologies,and further examines the limits of their dynamic performance and output capability from the perspectives of wide-bandgap semiconductor implementation and device-circuit co-design.关键词
脉冲功率开关/漂移阶跃恢复二极管/反向阻断双端固态闸流管/快速离化晶体管/雪崩晶体管Key words
pulsed power switch/drift step recovery diode/reverse blocking diode thyristor/fast ionization dynistor/avalanche bipolar junction transistor分类
信息技术与安全科学引用本文复制引用
王皓,梁琳,刘彤,李志文,温凯俊,杨涵..纳秒至皮秒级脉冲功率半导体开关器件机理与技术进展[J].现代应用物理,2026,17(4):1-23,23.基金项目
国家自然科学基金资助项目(51877092,51377069) （51877092,51377069）
装备预研重点实验室基金资助项目(6142605180104) （6142605180104）
装备预先研究资助项目(80919010602) （80919010602）
台达电力电子科教发展计划重点资助项目(DREK2022003) （DREK2022003）
