液晶与显示2026，Vol.41Issue(8)：1134-1143,10.DOI:10.3724/CJLCD.2026-0085
AZO电极厚度对低温退火MgZnO/ZTO-TFT性能的影响
Effect of AZO electrode thickness on the performance of low-temperature annealed MgZnO/ZTO thin-film transistors
摘要
Abstract
To meet the low-temperature fabrication requirement of flexible electronics,MgZnO/ZTO TFT with aluminum zinc oxide(AZO)transparent electrodes were fabricated via a low-temperature annealing process at 300℃.The effects of AZO electrode thickness(110 nm,165 nm,220 nm,and 275 nm)on device performance were systematically investigated.The thin films were characterized by ultraviolet-visible spectrophotometry(UV-Vis),atomic force microscopy(AFM),scanning electron microscopy(SEM),and X-ray photoelectron spectroscopy(XPS).The results show that the device with an AZO electrode thickness of 165 nm exhibits the optimal electrical performance,achieving a field-effect mobility of 0.482 cm²·V-1·s-1,a threshold voltage of 6.362 V,a subthreshold swing of 3.418 V/dec,and an on/off current ratio up to the order of 107.Analysis reveals that the oxygen vacancy concentration in the thin film reaches an optimal level at the AZO thickness of 165 nm.The appropriate oxygen vacancy concentration provides sufficient carriers for the thin film to enhance electrical conductivity,which effectively guarantees the injection and transport efficiency of charge carriers.Furthermore,the positive bias stress(PBS)and negative bias stress(NBS)stability of the device were evaluated.Under a gate bias stress of±20 V for 1 000 s,the threshold voltage shifts are only+1.99 V and-3.62 V,respectively,and the stability is slightly superior to that of conventional ITO-based devices.The final results demonstrate that the low-temperature annealed MgZnO/ZTO-TFT with a 165 nm-thick AZO electrode possesses favorable electrical properties and bias stability,providing a feasible strategy for the fabrication of low-temperature indium-free transparent TFT devices.关键词
AZO电极/MgZnO/ZTO-TFT/低温退火/XPS/稳定性Key words
AZO electrode/MgZnO/ZTO-TFT/low-temperature annealing/XPS/stability分类
信息技术与安全科学引用本文复制引用
郝云鹏,王超,郭亮,孙瑜,徐琳博..AZO电极厚度对低温退火MgZnO/ZTO-TFT性能的影响[J].液晶与显示,2026,41(8):1134-1143,10.基金项目
吉林省科技厅项目(No.20260206041ZP)Supported by Project of Department of Science and Technology of Jilin Province(No.20260206041ZP) （No.20260206041ZP）
