岩矿测试2026，Vol.45Issue(5)：1052-1065,14.DOI:10.15898/j.ykcs.202506160167
基于国产芯片的硅漂移探测器研发与性能调控机制研究
Development and Performance Regulation Mechanisms of Silicon Drift Detectors Based on Domestic Chips
摘要
Abstract
Silicon drift detectors(SDDs)hold significant application value in high-precision detection tasks due to their inherent advantages of high energy resolution,low noise,and rapid response.Addressing the performance bottlenecks of domestic SDDs concerning leakage current control,readout electronics integration,and high-throughput signal processing,this study focuses on the independent research and development of core detection devices.Herein,we report for the first time the development and systematic parameter characterization of the PA150,an SDD based on a domestically produced chip.To comprehensively characterize the key physical specifications of this newly developed chip,an X-ray fluorescence spectroscopy(XRF)testing system was constructed to conduct an in-depth evaluation of its comprehensive performance,including energy resolution,count-rate linear response,and multi-element identification capabilities.The experiment investigated the synergistic modulation mechanism of operating temperature and peaking time(the signal shaping time constant that balances noise filtering bandwidth and pulse pile-up probability)on detector performance.The results indicate that the PA150 achieves an energy resolution of 143 eV at 5.9 keV,representing an improvement of approximately 25%compared to the PA200 Si-PIN detector independently developed by our institute.Furthermore,physical mechanism analysis reveals that lowering the operating temperature effectively suppresses the parallel noise and thermal noise induced by the detector's leakage current.Meanwhile,adjusting the peaking time achieves a minimum-value balance between series noise(which is inversely proportional to time)and parallel noise(which is directly proportional to time).Based on the optimal parameter combination determined by this mechanism(-23℃coupled with a 4-5 μs peaking time),the detector's energy resolution is further improved to approximately 140 eV,achieving a high-count rate of 42.99 kcps while maintaining excellent resolving capabilities.When the peaking time is reduced to 1 μs,the count rate reaches 51.39 kcps.These performance metrics are comparable to those of international commercial SDDs,demonstrating exceptional characteristic peak separation capabilities in XRF applications.The independent development of this SDD effectively resolves the reliance on imported core detectors for the rapid screening of complex matrix samples(such as heavy metals in soil)by domestic XRF equipment,providing an indigenous technological solution for geological,environmental,and industrial online inspections.The BRIEF REPORT is available for this paper at http://www.ykcs.ac.cn/en/article/doi/10.15898/j.ykcs.202506160167.关键词
硅漂移探测器(SDD)/X射线荧光光谱/能谱测量/能量分辨率Key words
silicon drift detector(SDD)/X-ray fluorescence spectrometry/energy spectrum measurement/energy resolution分类
能源科技引用本文复制引用
李爱凤,吕兆东,曹学蕾,李恩泽,刘鹏..基于国产芯片的硅漂移探测器研发与性能调控机制研究[J].岩矿测试,2026,45(5):1052-1065,14.基金项目
国家重点研发计划项目(2022YFC3700801) （2022YFC3700801）
