人工晶体学报2026，Vol.55Issue(9)：1389-1409,21.DOI:10.16553/j.cnki.issn1000-985x.2026.0026
超宽禁带半导体氧化镓单晶工艺概述
Overview of the Process for Ultra-Wide Bandgap Semiconductor Gallium Oxide Single Crystals
摘要
Abstract
This paper reviews various methods for growing single crystals of gallium oxide(β-Ga2O3),including flux method,verneuil technique,vapor phase method,Czochralski method,floating zone growth,edge-defined film-fed growth,vertical Bridgman method,casting method,oxide crystal growth from cold crucible,and drop-fed growth.It also summarizes the impact of key parameters such as doping,crystal growth processes,and heat treatment on crystal quality.By detailing the core technical parameters of each process step,the study delineates the optimal operating parameters for different crystal growth techniques.The paper compares the characteristics of various methods across multiple dimensions including achievable maximum dimensions,crystal quality,doping compatibility,crucible dependence,atmosphere control complexity and industrial scalability,and identifies the primary challenges currently facing gallium oxide single crystal technology while proposing key directions for its advancement.Furthermore,based on global industry insights,practical recommendations are provided to optimize gallium oxide crystal growth processes and enhance semiconductor material performance,aiming to facilitate large-scale production and application of gallium oxide semiconductors and drive breakthroughs in critical products such as high-power power electronic devices and deep-ultraviolet detection devices.关键词
超宽禁带半导体/氧化镓/单晶生长/工艺参数/发展趋势Key words
ultra-wide bandgap semiconductor/gallium oxide/single crystal growth/process parameter/development trend分类
化学化工引用本文复制引用
李龙,宫学源,李培刚..超宽禁带半导体氧化镓单晶工艺概述[J].人工晶体学报,2026,55(9):1389-1409,21.基金项目
北京市通州区科技创新人才资助项目(CXTD2025003) （CXTD2025003）
