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期刊信息/Journal information
半导体学报(英文版)

中国电子学会和中国科学院半导体研究所

王守武

月刊

1674-4926

11-5781/TN

jos@semi.ac.cn

010-82304277

100083

北京912信箱

半导体学报(英文版)/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办,中国科学院半导体研究所承办的学术刊物,报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展,被EI、CA、SA等收录,在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
正式出版
收录年代
    2022年03期Issue 03,2022

    Ultra wideband CMOS digital T-type attenuator with low phase errors

    Chao Fan;Yahua Ran;Liqun Ye;P.57-59

    Editorial Board

    P.I0001-I0001

    2D arsenenes

    Yi Hu;Junchuan Liang;Lixiu Zhang;Zhong Jin;Liming Ding;P.1-4

    The origin and evolution of Y6 structure

    Jiamin Cao;Lifei Yi;Liming Ding;P.5-7

    Star perovskite materials

    Lixiu Zhang;Xiyan Pan;Ling Liu;Liming Ding;P.8-12

    Stabilizing black-phase CsPbI_(3) under over 70% humidity

    Tian Tian;Meifang Yang;Jianyu Yang;Wuqiang Wu;Liming Ding;P.13-21

    A review on SRAM-based computing in-memory:Circuits,functions,and applications

    Zhiting Lin;Zhongzhen Tong;Jin Zhang;Fangming Wang;Tian Xu;Yue Zhao;Xiulong Wu;Chunyu Peng;Wenjuan Lu;Qiang Zhao;Junning Chen;P.22-46

    Fe^(3+)-substitution effect on the thermal variation of J-E characteristics and DC resistivity of quadruple perovskite CaCu_(3)Ti_(4)O_(12)

    Kunal B.Modi;Pooja Y.Raval;Dolly J.Parekh;Shrey K.Modi;Niketa P.Joshi;Akshay R.Makadiya;Nimish H.Vasoya;Utpal S.Joshi;P.47-56

    An integrated front-end vertical hall magnetic sensor fabricated in 0.18μm low-voltage CMOS technology

    Zhengwu Shu;Lei Jiang;Xingxing Hu;Yue Xu;P.60-67

    Tunable crystal structure of Cu-Zn-Sn-S nanocrystals for improving photocatalytic hydrogen evolution enabled by copper element regulation

    Zhe Yin;Min Hu;Jun Liu;Hao Fu;Zhijie Wang;Aiwei Tang;P.68-73