电子元件与材料2005，Vol.24Issue(7)：1-4,4.
Sr引起的(Co,Ta)掺杂SnO2压敏陶瓷的晶粒尺寸效应
Grain Size Effects of (Co, Ta)-doped SnO2 Varistor Induced by Doping Sr
摘要
Abstract
The effects on the microstructure and electrical properties of (Co, Ta)-doped SnO2 varistors upon the addition of SrCO3 were investigated. The threshold electric field of the SnO2 based varistors increased significantly from 318 V/mm to 3 624 V/mm, the relative dielectric constants of the SnO2 based varistors decreased greatly from 1 509 to 69 as SrCO3concentration was increased up to 2.5 mol%. Varistors were found to have superhigh threshold voltage and comparatively large nonlinear coefficient α. For 2.0 mol% SrCO3-doped sample, threshold electrical field E and nonlinear coefficient α were 2 204V/mm and 24, and for 2.5 mol% SrCO3-doped sample, E and αwere 3 624 V/mm and 22.关键词
电子技术/碳酸锶/二氧化锡/压敏电阻/电学性质Key words
electronic technology/strontium carbonate/tin oxide/varistor/electrical properties分类
信息技术与安全科学引用本文复制引用
王矜奉,陈洪存,苏文斌,臧国忠,王春明..Sr引起的(Co,Ta)掺杂SnO2压敏陶瓷的晶粒尺寸效应[J].电子元件与材料,2005,24(7):1-4,4.基金项目
Supported by National Natural Science Foundation of China (Grant No.50072013) （Grant No.50072013）
the Natural Science Foundation of Shandong Province, China (No. Z2003F04) （No. Z2003F04）
