电子元件与材料2011，Vol.30Issue(2)：65-67,3.
固体电解质钽电容器介质膜晶化机理及其失效分析
Crystalloid dielectric film mechanism and failure analysis of solid tantalum capacitor
刘欣 1方文啸1
作者信息
- 1. 工业和信息化部电子第五研究所,电子元器件可靠性物理及其应用技术国家级重点试验室,广东,广州,510610
- 折叠
摘要
Abstract
Two kind of phenomena and mechanism, which included heat-induced and electric field-induced failure on surface of dielectric tantalum films, were explained detailedly. One case of CA45-H-35V-470μF solid tantalum capacitors which failed due to the tantalum dielectric film crystallization was reported. To avoid the failure caused by crystailoid dielectric film, filtrate way, physical analysis way, and voltage-reduced are available.关键词
固体电解质钽电容器/介质膜/晶化/失效分析Key words
solid tantalum capacitor/ dielectric film/ crystalloid/ failure analysis分类
信息技术与安全科学引用本文复制引用
刘欣,方文啸..固体电解质钽电容器介质膜晶化机理及其失效分析[J].电子元件与材料,2011,30(2):65-67,3.
