电子元件与材料2011，Vol.30Issue(2)：47-49,3.
热处理对TaN薄膜电性能的影响
Effect of heat treatment on the electric properties of TaN thin films
摘要
Abstract
TaN thin films were deposited on Al2O3 ceramic substrate by DC magnetron sputtering. The effects of heat treatment temperature and time on the sheet resistance (R□) and temperature coefficient of resistance (TCR) of TaN thin films were investigated. The results show that the heat treatment temperature has great effects on both R□ and TCR under heat treatment for 2 h. With the heat treatment temperature increasing from 200 ℃ to 600 ℃, R□ increases from 12 Ω/□ to 24 Ω/□ and TCR decreases from 15×10-6/℃ to -80×10-6/℃. Under the heat treatment temperature of 300 ℃, heat treatment time has little effects on both R□ and TCR. As heat treatment time increases, R□ and TCR change slightly.关键词
TaN薄膜/热处理/方阻/电阻温度系数Key words
TaN thin film/ heat treatment/ sheet resistance/ temperature coefficient of resistance分类
信息技术与安全科学引用本文复制引用
刘飞飞,唐云,张万里,蒋洪川,司旭..热处理对TaN薄膜电性能的影响[J].电子元件与材料,2011,30(2):47-49,3.基金项目
四川省支撑计划资助项目(No.2010GZ0156) （No.2010GZ0156）
电子薄膜与集成器件国家重点实验室基金资助项目(No.KFJJ200804) （No.KFJJ200804）
