电子元件与材料2011，Vol.30Issue(6)：36-39,4.
掺氮氧化钒薄膜的椭偏光谱表征
Spectroscopic ellipsometry characterization of nitrogrn-doped vanadium oxide films
摘要
Abstract
Nitrogen-doped vanadium oxide films were deposited on Si(100) substrates by reactive sputtering. The optical properties of the nitrogen-doped vanadium oxide films were studied with SE850 spectroscopic ellipsometry in the range of 1 300 nm to 2 300 nm (NIR band). The measured ellipsometric spectra of the nitrogen-doped vanadium oxide films were fitted with the Tauc-Lorentz model, and the optical constants (n, k) as well as the thicknesses of the films were calculated. Increases in n, k and decreases in deposition rate of the films are observed with increasing N content. This is correlated to the higher packing density and the narrower optical band gap of the nitrogen-doped vanadium oxide films,resulting from nitrogen incorporation.关键词
反应溅射/椭偏仪/氧化钒薄膜/掺氮Key words
reactive sputtering/ spectroscopic ellipsometry/ vanadium oxide films/ nitrogen-doping分类
信息技术与安全科学引用本文复制引用
李贺,顾德恩,王涛,吴志明,蒋亚东..掺氮氧化钒薄膜的椭偏光谱表征[J].电子元件与材料,2011,30(6):36-39,4.基金项目
国家自然科学基金资助项目(No.60806021) （No.60806021）
