电子元件与材料2011，Vol.30Issue(6)：48-52,5.
基于板上封装技术的大功率LED热分析
Thermal analysis of high-power LED based on COB packaging technology
摘要
Abstract
Three kinds of high-power LED packing methods based on the structure and the character of COB were presented, the first method was that the LED chip was directly boned to the aluminum radiators (COB-Ⅲ), the 2nd and 3rd methods were that LED chips were bonded on aluminum pad and PCB board (COB-Ⅱ, COB-Ⅰ), respectively. The thermal characteristics of the three COB structures were simulated by FEM analysis and tested. The results show that when the ambient temperature is 30 ℃, the LED junction temperatures of COB-Ⅱ and COB-Ⅲ structures are 21.5 ℃ and 42.7 ℃ respectively higher than that of COB-Ⅲ structure, and heat resistances of COB-Ⅲ and COB-I structures are 25.7,58.8 K/W respectively higher than that of COB-Ⅲ, and COB-Ⅲ structure have lower optical decline.关键词
大功率LED/板上封装/热阻/有限元热分析Key words
high-power LED/ chip on board/ heat resistance/ finite element thermal analysis分类
信息技术与安全科学引用本文复制引用
姜斌,宋国华,缪建文,袁莉,纪宪明..基于板上封装技术的大功率LED热分析[J].电子元件与材料,2011,30(6):48-52,5.基金项目
江苏省自然科学基金资助项目(No.BK2008183) （No.BK2008183）
南通市应用研究资助项目(No.K2010058) （No.K2010058）
南通市公共技术服务平台资助项目(No.DE2010005) （No.DE2010005）
南通大学自然科学研究资助项目(No.092005) （No.092005）
