电子元件与材料2011，Vol.30Issue(5)：23-25,34,4.
衬底温度对PLD法制备的ZnO:Ga薄膜结构和性能的影响
Effect of substrate temperature on structure and properties of ZnO : Ga thin films by pulsed laser deposition
摘要
Abstract
Gallium doped zinc oxide (ZnO: Ga) thin films were deposited on quartz substrates by pulsed laser deposition. The effects of substrate temperature on the structure, surface morphology and photoelectric properties of the ZnO : Ga thin films were investigated. The obtained thin films possess a polycrystalline hexagonal wurtzite structure. With the increase of substrate temperature, the intensity of diffraction peaks increases significantly and the grain size increases.The lowest resistivity is 8.5×10-4Ω · cm and the transmittance in the visible range is over 87％ for the prepared ZnO: Ga thin films when the substrate temperature is 450 ℃.关键词
脉冲激光沉积/ZnO:Ga薄膜/衬底温度/光电性能Key words
pulsed laser deposition/ ZnO: Ga thin film/ substrate temperature/ photoelectric properties分类
数理科学引用本文复制引用
王书昶,张春伟,刘振华,刘拥军,何军辉..衬底温度对PLD法制备的ZnO:Ga薄膜结构和性能的影响[J].电子元件与材料,2011,30(5):23-25,34,4.基金项目
江苏省科技厅工业支撑项目资助(No.BE2009106) （No.BE2009106）
