电子元件与材料2011，Vol.30Issue(4)：13-16,4.
SiO2掺杂对BST-MgO陶瓷微观结构和介电性能的影响
Effects of SiO2 doping on the microstructure and dielectric properties of BST-MgO ceramics
摘要
Abstract
0.4Ba0.6Sr0.4TiO3-0.6MgO-xSiO2(0≤x≤5.0％)ceramics were prepared by conventional ceramic preparation technique. The effects of SiO2 content on the microstructure and dielectric properties (at low and microwave frequency) of BST-MgO (BSTM) ceramics were investigated. The results of XRD analysis show that SiO2 transforms from SiO2 to Mg2SiO4 in BSTM ceramics with increasing SiO2 content. Doping 0.5％ (mass fraction) SiO2 increases the density,improves the tenability and reduces the microwave loss of BSTM ceramics. The tunability and Q·f of BSTM ceramics with 0.5％ SiO2 is found to be 16.21％ and 109.5 GHz, respectively. With SiO2 content increasing further, the tunability of BSTM ceramics increases, the εr decreases, while the Q ·fdecreases first and then increases. When 3％ (mass fraction) SiO2 is doped, the tunability of BSTM ceramics reaches 17.6％ while its Q ·fis 89 GHz.关键词
无机非金属材料/钛酸锶钡/氧化镁/二氧化硅掺杂/介电性能/可调率Key words
inorganic non-metallic materials/ BST/ MgO/ SiO2-doping/ dielectric properties/ tunability分类
信息技术与安全科学引用本文复制引用
汪小红,史霄,何建平,吕文中..SiO2掺杂对BST-MgO陶瓷微观结构和介电性能的影响[J].电子元件与材料,2011,30(4):13-16,4.基金项目
国防基础科研重人项目资助(No.A1420080168) （No.A1420080168）
