电子元件与材料2009，Vol.28Issue(12)：36-38,3.DOI:10.3969/j.issn.1001-2028.2009.12.011
ZnO薄膜紫外光敏特性及晶界势垒的研究
Study on the UV photo-sensitive characteristic and grain boundary barrier of ZnO thin films
何俊刚 1陈环 1王莉 1刘志宇 1傅刚1
作者信息
- 1. 广州大学,物理与电子工程学院,广东,广州,510006
- 折叠
摘要
Abstract
Using Zn(Ac)_2· 2H2O as raw material,ZnO thin films were deposited on quartz substrates by sol-gel method.The surface morphology of the thin films was observed with AFM.The I-V characteristics of ZnO thin films were measured after different heat-treated temperatures in vacuum,then the grain boundary barrier height of the ZnO thin films was deduced.The influences of the heat-treated temperature on the performance of ZnO thin films were investigated.The results show that the properties of ZnO thin films are good heat-treated at 650℃.The ZnO thin films are uniform and dense,and possess an average grain size of 20～30 nm.The UV sensitivity of ZnO thin film is 43.95 measured at bias of 10 V and light intensity of 1.24×10~(-3) W/cm~2.The grain boundary barrier height of the ZnO thin films decrease from 0.079 eV to 0.011eV after UV illumination.The UV sensitivity of the ZnO films is closely related to such change in the grain boundary barrier height.关键词
ZnO薄膜/热处理温度/紫外光灵敏度/晶界势垒Key words
ZnO thin film/heat-treated temperature/UV sensitivity/grain boundary barrier分类
信息技术与安全科学引用本文复制引用
何俊刚,陈环,王莉,刘志宇,傅刚..ZnO薄膜紫外光敏特性及晶界势垒的研究[J].电子元件与材料,2009,28(12):36-38,3.
