电子元件与材料2011，Vol.30Issue(9)：13-16,4.
SAW器件用金刚石膜的制备工艺研究
Fabrication process research of diamond film for SAW devices
摘要
Abstract
In order to improve the properties of diamond film and meet the preparation of SAW devices, with bell jar microwave plasma chemical vapor deposition (MPCVD) equipment, the influence of different gas systems on the growth rate, resistivity, surface morphology and relative contents of carbon combined states of diamond films were studied. The results show that with H2-CH3COCH3, CH4-H2-Ar and CH4-H2-N2 gas systems, the growth rate of diamond films are up to 0.63, 0.59 and 0.58 um/h respectively, which double that with CH4-H2 gas system at least, and the diamond films have high resistivity (1010Ω · Cm), good crystal form, small grain size and high relative content (fraction of number of particles)of diamond C-C bond (more than 80%). Accordingly, oxygen, argon and nitrogen play an important role in the deposition of diamond film.关键词
金刚石膜/生长速率/微波等离子体化学气相沉积/声表面波器件Key words
diamond film/growth rate/MPCVD/SAW device引用本文复制引用
李德贵,冉均国,苟立..SAW器件用金刚石膜的制备工艺研究[J].电子元件与材料,2011,30(9):13-16,4.基金项目
国家自然科学基金资助项目(10275046) （10275046）
百色学院引进人才启动资金资助项目 （）
