电子元件与材料2011，Vol.30Issue(9)：24-26,35,4.
Zn2SiO4掺杂对氧化锌压敏电阻性能的影响
Effects of Zn2SiO4 doping on the properties of zinc oxide varistors
摘要
Abstract
Zinc oxide varistors doped with Zn2SiO4 were prepared by conventional ceramic technology. The effects of Zn2SiO4 doping amount on the density, grain microstructure, low current properties and surge absorption capability of zinc oxide varistors were studied. The results indicate that when the Zn2SiO4 doping amount is 0.75% (mole fraction), zinc oxide varistor with dense and uniform grain structure is obtained; the electrical properties of zinc oxide varistors are also improved, breakdown voltage gradient and nonlinear coefficient are 438 V/mm and 85 respectively, leakage current is 0.15 uA, and after 5 kA current with 8/20 us wave surge current impulse, the residual voltage ratio and breakdown voltage variation are 2.0 and 4.0%.关键词
氧化锌压敏电阻/Zn2SiO4掺杂/晶粒/电学性能Key words
zinc oxide varistors/Zn2SiO4 doping/grain/electrical properties分类
信息技术与安全科学引用本文复制引用
黄国贤,姜胜林,郭立,张光祖,翁俊梅..Zn2SiO4掺杂对氧化锌压敏电阻性能的影响[J].电子元件与材料,2011,30(9):24-26,35,4.基金项目
科技型中小企业技术创新基金资助项目(No.09C26214201910) （No.09C26214201910）
