电子元件与材料2011，Vol.30Issue(12)：24-26,3.
退火温度对高介电常数Ta2O5薄膜电学性能的影响
Effects of annealing temperature on the electrical properties of high permittivity tantalum pentoxide films
郑丹 1杨晟1
作者信息
- 1. 武汉软件工程职业技术学院光电子与通信工程系,湖北武汉430205
- 折叠
摘要
Abstract
Ta2O5 films were deposited on the silicon substrate by magnetron sputtering method, and then the prepared films were annealed at different temperatures. The microstructure of prepared films were analyzed by X-ray diffraction. Metal-oxide-semiconductor (MOS) capacitors were fabricated by sputtering a Pt electrode on the top of dielectric films and another Pt electrode on the back of silicon substrate. The electrical properties of MOS capacitors prepared with the prepared films annealed at different temperatures were measured. The results show that the film begins to crystallize at 700 ℃ and its structure is tetragonal β-Ta2O5. The capacitor fabricated with the film annealed at 700 ℃ possesses the best properties: the highest permittivity of 34.9, and the lowest leakage current density of 1.87×10-6 A/cm2 with the applied voltage of 1 V.关键词
Ta2O5薄膜/退火温度/漏电流/介电常数Key words
tantalum pentoxide films/ annealing temperature/ leakage current/ dielectric constant分类
信息技术与安全科学引用本文复制引用
郑丹,杨晟..退火温度对高介电常数Ta2O5薄膜电学性能的影响[J].电子元件与材料,2011,30(12):24-26,3.
