电子元件与材料2012，Vol.31Issue(3)：35-39,5.
硅基(Pb,La)(Zr,Ti)O3反铁电厚膜的制备及介电性能
Preparation and dielectric properties of (Pb,La)(Zr, Ti)O3 antiferroelectric thick films on silicon substrates
摘要
Abstract
(Pb,La)(Zr,Ti)03 antiferroelectric thick films (about 2.2 μm thick) showing strong (l00)-orientation preference were prepared on silicon substrates by sol-gel method. The electric-field-induced phase transition and the temperature-induced phase transition behaviors of the thick films were studied under different temperatures and different electric fields, respectively. The results show that the (Pb, La)(Zr, Ti)O3 antiferroelectric thick films are antiferroelectric (AFE) at room temperature. With the increase in temperature, the critical electric field strength for phase transition of the thick films decreases gradually, while the AFE state of the thick films becomes more and more unstable. When the temperature is above 132 ℃ and the electric field strength is 0 kV/cm, the thick films are paraelectric. With the increase of electric field strength, the critical temperature for the AFE-FE phase transition of the thick films shifts to lower value. When the electric field strength is above 164 kV/cm, the thick films are ferroelectric at room temperature.关键词
溶胶-凝胶法/反铁电厚膜/介电性能/相变效应Key words
sol-gel method/ antiferroelectric thick film/ dielectric properties/ phase transition分类
通用工业技术引用本文复制引用
耿文平,丑修建,吕勇博,关新锋,张文栋..硅基(Pb,La)(Zr,Ti)O3反铁电厚膜的制备及介电性能[J].电子元件与材料,2012,31(3):35-39,5.基金项目
国家自然科学基金资助项目(No.51175483) （No.51175483）
山西省基础研究计划资助项目(No.20100210023-6) （No.20100210023-6）
