电子与封装2012，Vol.12Issue(3)：29-32,4.
WSI Polycide工艺的研究
Study on WSI Polycide Process
朱赛宁 1聂圆燕 1陈海峰1
作者信息
- 1. 中国电子科技集团公司第58研究所,江苏无锡214035
- 折叠
摘要
Abstract
In this paper,the reason of WSI peeling and splash in the polycide technics was investigated basing on the 0.5μm CMOS process technics.And the effect on the WSI films＇ warpage and stress,such as cleaning condition before WSI deposition,the temperature of annealing and the cap layer was studied.Meanwhile,the process deposition parameters of WSI film were studied based on the amount experimental data.By changing the conditions of the wafer warpage and stress,checking the surface of the wafer with the help of microscope,the optimum condition of 0.5μm Polycide deposition was obtained.The results show that adding the cap layer after WSI deposition will help to decrease the occurrence of WSI films peeling and splash in the later period of polycide process,and the morphology of the wafer surface can achieve the MOS device manufacturing requirements.关键词
WSI/Cap/Layer层/优化/Polycide/应力Key words
WSI/cap layer/optimization/polycide/stress分类
信息技术与安全科学引用本文复制引用
朱赛宁,聂圆燕,陈海峰..WSI Polycide工艺的研究[J].电子与封装,2012,12(3):29-32,4.
