电子与封装2012，Vol.12Issue(3)：33-35,40,4.
后端工艺的N型欧姆接触
Ohmic Contact of N-type in Back-end Technology
徐海铭 1秦征峰 1寇春梅 1黄蕴1
作者信息
- 1. 中国电子科技集团公司第58研究所,江苏无锡214035
- 折叠
摘要
Abstract
This paper introduces the necessary conditions of the ohmic contact formation.Secondly,a variety of bad n＋ ohmic contact is analyzed and provided appropriate solutions in process.At the same time plasma damage has a great influence in the ohmic contact that is proposed and verified.关键词
欧姆接触/PLASMA/台阶覆盖Key words
ohmic contact/PLASMA/step coverage分类
信息技术与安全科学引用本文复制引用
徐海铭,秦征峰,寇春梅,黄蕴..后端工艺的N型欧姆接触[J].电子与封装,2012,12(3):33-35,40,4.
