电子与封装2012，Vol.12Issue(5)：28-30,3.
厚多晶硅膜饱和掺杂工艺研究
Process of Saturated Doping to Polysilicon Thick Film
林丽 1聂圆燕 1吴晓鸫1
作者信息
- 1. 无锡中微晶园电子有限公司,江苏无锡214035
- 折叠
摘要
Abstract
This paper mainly introduced the method of making polysilicon resistor of low resistance by saturated doping. The doping model in polysilicon has been analyzed. Low resistant polysilicon can be made in manner of a type diffusion model. In this model, long-time doping in diffusion tube should be taken. The resistance of doped polysilicon with definite thickness can＇t be reduced infinitively due to the solubility of impurity. As a result, the thick polysilicon should be taken. In this article, Low resistance polysilicon film has been made in manner of definite furnace diffusion mode. Through experiment research, it has been proved that stable, uniform, low resistance polysilicon film can be made by this method.关键词
厚多晶硅薄膜/饱和掺杂/低阻/多晶硅电阻Key words
polysilicon thick film/saturated doping/low resistance/polysilicon resistance分类
信息技术与安全科学引用本文复制引用
林丽,聂圆燕,吴晓鸫..厚多晶硅膜饱和掺杂工艺研究[J].电子与封装,2012,12(5):28-30,3.
