电子与封装2012，Vol.12Issue(7)：38-40,44,4.
多晶发射极结构三极管抗总剂量能力研究
The Study of Polysilicon Emitter Bipolar Transistor to Radiation of Total Dose
郑若成 1顾爱军1
作者信息
- 1. 无锡中微晶园电子有限公司,江苏无锡214035
- 折叠
摘要
Abstract
This paper analyses the mechanism of total dose radiation and the radiation bottleneck for bipolar transistor, by comparing the difference of the polysilicon emitter and ordinary bipolar structure, it is pointed out that the polysilicon emitter bipolar has stronger For Polysilicon emitter transistor, polysilicon/thin immunity to total dose radiation than ordinary bipolar. oxide stack structure instead of thick oxide structure between EB electrode enhance immunity to total dose radiation. The polysilicon emitter bipolar structure is optimized during the analysis of total dose radiation for polysilicon emitter bipolar. Finally, the polysilicon emitter bipolar total dose radiation result is give and analyzed.关键词
总剂量辐照/三极管/多晶发射极结构/辐照实验Key words
total dose radiation/bipolar transistor/polysilicon emitter structure/radiation experiment分类
信息技术与安全科学引用本文复制引用
郑若成,顾爱军..多晶发射极结构三极管抗总剂量能力研究[J].电子与封装,2012,12(7):38-40,44,4.
