电子元件与材料2012，Vol.31Issue(7)：47-50,4.
射频磁控溅射法制备Cu2ZnSnS4薄膜
Preparation of Cu2ZnSnS4 thin films by RF magnetron sputtering
摘要
Abstract
Cu2ZnSnS4 (CZTS) thin films were deposited on glass by RF magnetron sputtering method at room temperature, and annealed in Ar atmosphere rapidly. The effects of annealing temperature on the structure, composition, morphology and bandgap of CZTS films were studied by X-ray diffraction, X-ray energy disperse spectroscopy, atomic force microscopy and absorption spectrum. The results show that these prepared CZTS Films are polycrystalline, which exhibit strong preferential orientation of grains along (112) plane, being S-rich and Cu-poor in composition and with a uniform surface morphology. The bandgaps of CZTS thin films annealed at 350,400,450 and 500 ℃ are derived to be 1.49, 1.53,1,51 and 1.46 eV, respectively.关键词
Cu2ZnSnS4/射频磁控溅射/快速退火/多晶薄膜/择优取向Key words
Cu2ZnSnS4/ RF magnetron sputtering/ rapid thermal annealing/ polycrystalline thin films/ preferential orientation分类
信息技术与安全科学引用本文复制引用
文亚南,李琳,陈士荣,史成武,梁齐..射频磁控溅射法制备Cu2ZnSnS4薄膜[J].电子元件与材料,2012,31(7):47-50,4.基金项目
国家自然科学基金资助项目(No.51072043) （No.51072043）
