郑州轻工业学院学报（自然科学版）2012，Vol.27Issue(2)：102-104,3.
量子尺寸效应对InGaN/GaN量子点中的类氢杂质态的影响
Quantum size effect on hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot
摘要
Abstract
Based on the effective-mass approximation, the quantum size effect on binding energy of hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot was investigated by means of variational method. Numerical results showed that the donor binding energy of hydorgenic impurity depended on the impurity position and quantum dot structure in a large extent. The donor binding energy of impurity located at the center of quantum dot was the largest. Impurity donor binding energy decreased when quantum dot height and radius increase for any impurity position.关键词
InGaN/GaN/量子点/类氢杂质态/变分法/量子尺寸效应/束缚能Key words
InGaN/GaN/quantum dot/hydorgenic impurity state/variational method/quantum size effect/ binding energy分类
数理科学引用本文复制引用
蒋逢春,苏玉玲,李俊玉..量子尺寸效应对InGaN/GaN量子点中的类氢杂质态的影响[J].郑州轻工业学院学报（自然科学版）,2012,27(2):102-104,3.基金项目
河南省基础与前沿技术研究计划项目(102300410108) （102300410108）
河南省教育厅自然科学研究计划项目(2011A140028) （2011A140028）
郑州轻工业学院重大预研基金项目(2009XYYJJ006) （2009XYYJJ006）
