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基于CMOS工艺平台反熔丝FPGA实现

陶伟 石乔林 李天阳

电子与封装Issue(8):23-25,29,4.
电子与封装Issue(8):23-25,29,4.

基于CMOS工艺平台反熔丝FPGA实现

The Antifuse FPGA Based on CMOS Process

陶伟 1石乔林 1李天阳1

作者信息

  • 1. 中国电子科技集团公司第58研究所,江苏无锡214035
  • 折叠

摘要

Abstract

  The antifuse FPGA is widely used in the field of military affairs and satellite, because its low power, high density and dependability, better in radiation hardness, flexible in designs. But the process was limited in our country, we have not found the researches about this technique. So the tectonic of we hold is used to develop a new antifuse cell, which is compatible to CMOS process. The cell's resistance after fusion is 330Ω~400Ω, and design of array has been given. The advantages of low power, high density and flexible in designs are embodied. The design not only satisfied the needs of present work, but supplies a worthful reference for antifuse circuit design in future, it will provide good supports in the aerospace and military applications.

关键词

反熔丝单元/FPGA/熔断电阻/反熔丝阵列设计

Key words

antifuse cell/FPGA/resistance after fusion/design of antifuse array

分类

信息技术与安全科学

引用本文复制引用

陶伟,石乔林,李天阳..基于CMOS工艺平台反熔丝FPGA实现[J].电子与封装,2012,(8):23-25,29,4.

电子与封装

1681-1070

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