摘要
Abstract
To meet the growing trend of Moore’s Law, chip technology has come“More than Moore”era of 3D integration. Further miniaturization of electronic systems and performance, 3D integration solution is needed more and more. As for the demand-driven, the through-silicon vias(TSV)interconnect technology emerged as the three-dimensional integration and it is one of key techniques for 3D integration and wafer-level packaging. TSV integration is compared with raditional assembly methods, there are several advantages to adopt this technology. The main ones are: reduction of interconnects length, electrical performance improvement induced and wider range of possibilities for heterogeneous integration. 3D integration would then allow to build systems including several families of components usually hardly compatible, like RF devices, memory, logic and MEMS. In this paper, nearly two years of foreign literature about 3D-TSV integrated interconnect technology and processes are summarized, the future trend of technology is discussed.关键词
互连/三维集成/硅通孔Key words
interconnection/3D integration/TSV分类
信息技术与安全科学
