电子与封装Issue(10)：19-20,40,3.
三氯氢硅本征电阻率(纯度)的测试方法
The Intrinsic Resistivity Measurement of the Trichlorosilane
杨帆 1谭卫东 1骆红 1孙健 1周海枫1
作者信息
摘要
Abstract
As the key material, Trichlorosilane (SiHCl3)' purity will directly affect the capability of epitaxy. Usually, two methods for measuring the purity of the Trichlorosilane,one is chemical analysis,the other is measurement of epitaxy intrinsic resistivity after no-doping epitaxial layer growth. The main factor influencing the intrinsic resistivity of epitaxial is the auto-doping. Increase the epitaxial thickness can effectually reduces auto-doping, but will increase the cost with no-planning. In this article discussed the best gorwing process of intrinsic epitaxy for measuring the intrinsic resistivity and the concentration of Trichlorosilane.关键词
三氯氢硅/纯度/本征电阻率Key words
Trichlorosilane/purity/intrinsic resistivity分类
信息技术与安全科学引用本文复制引用
杨帆,谭卫东,骆红,孙健,周海枫..三氯氢硅本征电阻率(纯度)的测试方法[J].电子与封装,2012,(10):19-20,40,3.
