电子与封装Issue(9)：6-9,17,5.
倒装焊器件封装结构设计
Package Structure Design of Flip Chip Device
敖国军 1张国华 1蒋长顺 1张嘉欣1
作者信息
- 1. 无锡中微高科电子有限公司，江苏无锡214035
- 折叠
摘要
Abstract
Flip chip bonding is one of development trend of high-integrated semiconductor for the future. Flip chip device includes carrier substrate, integrated circuit, pin(solder ball, solder column, pin), lid (hermetic package)or heat spreader(nonhermetic package). The article describes the relation of lfip chip package structure with package material, lfip chip bonding area, frequency, air-tightness, power etc. Low temperature co-ifred ceramic is ift for the lfip chip of high frequency and large area. Power, thermal interface material, heat spreader and air-tightness determine the dissipation structure of high power lfip chip. There are parallel seam welding and low temperature solder sealing for hermetic package of lfip chip device.关键词
倒装焊/封装结构/气密性/高频电路/大功率Key words
lfip chip bonding/package structure/air-tightness/high speed circuit/high power分类
信息技术与安全科学引用本文复制引用
敖国军,张国华,蒋长顺,张嘉欣..倒装焊器件封装结构设计[J].电子与封装,2013,(9):6-9,17,5.
