摘要
Abstract
There are many advantages of RF LDMOS, such as high output power, high gain, high linearity and excellent heat stability. RF LDMOS is widely used in the field of mobile communication station, digital broadcasting television emission, RF communication and microwave radar system. Impendence matching is the key task of LDMOS transistor application circuit. LDMOS transistor matching circuit is used for realizing max output power transmission. The paper designed matching circuit for CETC58 research institution’ S band 10 W LDMOS transistor, using microwave simulation tool ADS. After exhaustive adjusting the matching circuit, the technical index of input return loss, power gain, output power, efficiency and harmonic wave ware accorded with the design aim. The output power, gain and efficiency of S band LDMOS power transistor are bigger than 13.8 W, 12.4 dB and 37.9%respectively in the band of 3.1~3.4 GHz.关键词
LDMOS/阻抗匹配/偏置电路Key words
LDMOS/impendence matching/bias circuit分类
信息技术与安全科学
