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铁氧体隔离器薄膜电路制备工艺研究

魏晓旻 柳龙华

电子与封装Issue(1):34-37,4.
电子与封装Issue(1):34-37,4.

铁氧体隔离器薄膜电路制备工艺研究

Preparation Process Study of Thin Film Circuits on Ferrite Isolator

魏晓旻 1柳龙华1

作者信息

  • 1. 中国电子科技集团公司第38研究所,合肥230088
  • 折叠

摘要

Abstract

The multilayer film structure of microstrip isolator was prepared by magnetron sputtering on ferrite substrate. The photolithography and etching process of the iflm resistor was avoided by sputtering of resistor layer with metal mask. The preparation process also avoided the dependence on sputtering Au target and reactive ion etching technologies by using Cu target and wet etching. This new process simpliifed the fabrication of NiCr iflm resistor and reduced the cost of thin iflm circuits. It can be applied in fabricating iflm circuits with integrated resistor.

关键词

铁氧体/微带隔离器/薄膜电路/磁控溅射

Key words

ferrite/microstrip isolator/thin iflm circuits/magnetron sputtering

分类

信息技术与安全科学

引用本文复制引用

魏晓旻,柳龙华..铁氧体隔离器薄膜电路制备工艺研究[J].电子与封装,2014,(1):34-37,4.

基金项目

装备预先研究项目 ()

电子与封装

1681-1070

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