电子与封装Issue(4)：42-44,3.
电路级热载流子效应仿真研究
Circuit-level Lifetime Simulation Based on HCI
高国平 1曹燕杰 1周晓彬 1陈菊1
作者信息
- 1. 中国电子科技集团公司第58研究所，江苏无锡214035
- 折叠
摘要
Abstract
As VLSI fabrication technologies move into the deep submicron regime, feature size such as the channel length, the junction depth and the gate oxide thickness, is reducing without proportional scaling of the power supply voltage. This degrades the current-voltage characteristics of the MOSFET. The paper presents a investagation of circuit-level HCI simulation.关键词
热载流子效应/MOSFET/ICKey words
HCI/MOSFET/IC分类
信息技术与安全科学引用本文复制引用
高国平,曹燕杰,周晓彬,陈菊..电路级热载流子效应仿真研究[J].电子与封装,2014,(4):42-44,3.
