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基于0.18μm CMOS高压工艺的低压器件优化设计

朱琪 华梦琪 宣志斌 张又丹

电子与封装Issue(7):23-25,3.
电子与封装Issue(7):23-25,3.

基于0.18μm CMOS高压工艺的低压器件优化设计

Design and Application of CMOS Low Voltage Devices in High Pressure Process

朱琪 1华梦琪 1宣志斌 1张又丹1

作者信息

  • 1. 中国电子科技集团公司第58研究所,江苏无锡 214035
  • 折叠

摘要

Abstract

In the design of products, whether can lfexible application of low voltage devices and high voltage devices of a successful design is vital. The design of the product is a multi power chip, device types, the maximum power is ±15 V, based on the SMIC 0.18 μm 40 V HV-LDMOS technology, 5 V low voltage device layout with design optimization in the ±15 V power supply, on the same chip to realize the high and low voltage circuit switching, no the occurrence of leakage and breakdown, meet the electrical characteristics of various devices, products, stable work, reliable performance, and good overall performance.

关键词

CMOS/HVMOS/LDMOS/BICMOS

Key words

CMOS/HVMOS/LDMOS/BICMOS

分类

信息技术与安全科学

引用本文复制引用

朱琪,华梦琪,宣志斌,张又丹..基于0.18μm CMOS高压工艺的低压器件优化设计[J].电子与封装,2014,(7):23-25,3.

电子与封装

1681-1070

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