电子与封装Issue(8)：18-24,41,8.
基于J750EX测试系统的SDRAM测试技术研究
The Investigation of the Testing Technology for SDRAM Based on the J750EX Measuring System
王征宇 1何志伟 1章少云1
作者信息
- 1. 中国电子科技集团公司第58研究所，江苏无锡214035
- 折叠
摘要
Abstract
The SDRAM(Synchronous Dynamic Random Access Memory) has been widely used for its excellent performance, low price, but due to the fact that the device has a larger capacity (usually a 100 Mb level and above) and the complexity of the implementation for controling, it makes the testing of SDRAM become more difficult, therefore, to explore the SDRAM test technology and create test platform for this kind of the device also has a very important significance. The paper introduces the basic working principle of SDRAM, followed by a detailed describe to the study of the test technology based on J750EX testing system, proposed a method using DSIO resources to achieve the accumulated generating operation of the address for SDRAM. It’s greatly reducing the length of test vectors. It can effectively economize the test time, and reduce the cost of testing. In addition, the key timing parameters of SDRAM, such as tRCD (row strobe cycle), CL (read latency), tWR (write back time), can be tested using the test system to send the appropriate control excitations for the device to complete the complicated time cooperate of SDRAM, so that the test requirements of the performance for the device can be achieved.关键词
同步动态随机存储器/DSIO/J750EXKey words
SDRAM/DSIO/J750EX分类
信息技术与安全科学引用本文复制引用
王征宇,何志伟,章少云..基于J750EX测试系统的SDRAM测试技术研究[J].电子与封装,2014,(8):18-24,41,8.
