摘要
Abstract
In nano-scale CMOS process, integrate circuit’s area become larger, and it’s function complicated. Because device’s stored charges make device failed,which should be taken into consideration. This failure model is charged device model. The paper introduces the difference of circuit diagram and electric current between the human body model, the machine model and the charged device model. It explains the mechanism and the reasons how the device stored charges: in processes of the ICs, charges can be induced by the ESD source and device rub with other substances and air. Finally, it analysis the failure mechanism made by CDM. CDM is driven by charges, the direction of the ESD current is from device’s inner to outer, it’s high current and quick rise time will make the oxygen gate fail.关键词
静电放电/器件充电模型/人体模型/机器模型Key words
electrostatics discharge/charged device model/human body model/machine model分类
信息技术与安全科学
