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一种高电源抑制比的带隙基准电压源的设计

屠莉敏 何颖 易峰

电子与封装Issue(11):31-33,3.
电子与封装Issue(11):31-33,3.

一种高电源抑制比的带隙基准电压源的设计

Design of a High PSRR Bandgap Voltage Reference

屠莉敏 1何颖 1易峰1

作者信息

  • 1. 中国电子科技集团公司第58研究所,江苏无锡 214035
  • 折叠

摘要

Abstract

A high PSRR and low temperature coefifcient BiCMOS bandgap reference was presented. In the design, the cascade current mirror is used in the circuit, and the output of the OPAMP is used for the bias of itself and to drive the next stage, in the same time PTAT temperature compensate is carried out. In the design of the paper, the output voltage is 1.242 V, while the temperature is 25℃. With the temperature range of-40~120℃, the bandgap reference voltage difference is 10 mV, which demonstrates the 60×10-6℃-1 temperature ratio.

关键词

带隙基准源/与绝对温度成正比/电源抑制比/低温度系数

Key words

bandgap voltage reference/proportional to absolute temperature/power supply rejection rate/low temperature coefifcient

分类

信息技术与安全科学

引用本文复制引用

屠莉敏,何颖,易峰..一种高电源抑制比的带隙基准电压源的设计[J].电子与封装,2014,(11):31-33,3.

电子与封装

1681-1070

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