电子与封装Issue(3)：14-17,4.
抗辐照标准单元库验证方法研究
The Test and Verify of Radiation-hard Standard Cell Library
徐大为 1姚进 1胡永强 1刘永灿 1周晓彬 1陈菊1
作者信息
- 1. 中国电子科技集团公司第58研究所，江苏无锡 214035
- 折叠
摘要
Abstract
The paper study the test and verify of radiation-hard Standard Cell Library. Take 0.5 μm radiation-hard Standard Cell Library for instance, the paper designs a test circuit to test the Cell Library. The function and performance are conifrmed. To study the radiation-hard ability of the cell library, total dose radiation experiment has been done, the radiation-hard ability has reached 500 krad(Si).关键词
抗辐照标准单元/SOI/验证电路Key words
radiation-hard standard cell library/silicon on insulator/test circuit分类
信息技术与安全科学引用本文复制引用
徐大为,姚进,胡永强,刘永灿,周晓彬,陈菊..抗辐照标准单元库验证方法研究[J].电子与封装,2015,(3):14-17,4.
