电子与封装Issue(5)：36-40,5.
一种基于总剂量效应的SOI器件模型快速提取方法
A Rapid Extraction Method of SOI Device Model Parameters Based on the Total Ionizing Dose Radiation Effect
李艳艳 1顾祥 1潘滨 1朱少立 1吴建伟1
作者信息
- 1. 中国电子科技集团公司第58研究所，江苏无锡214035
- 折叠
摘要
Abstract
Introduced a simple extraction method of the SOI device model parameter, which is based on the total ionizing dose radiation effect(TID). Firstly, extracted the device model parameters before the radiation. After that, the model parameters, which are sensitive to the TID, were optimized for the same device after 100 krad(Si)radiation. Finally, we veriifed the optimized model parameters. The result indicated that the method could be exactly and effectively extracted the model parameters to assess the inlfuence of the total ionizing dose radiation effect on the SOI circuit.关键词
SOI器件/SPICE模型参数/总剂量效应Key words
SOI device/SPICE model parameter/total ionizing dose radiation effect分类
信息技术与安全科学引用本文复制引用
李艳艳,顾祥,潘滨,朱少立,吴建伟..一种基于总剂量效应的SOI器件模型快速提取方法[J].电子与封装,2015,(5):36-40,5.
