摘要
Abstract
Thermal resistance value is an important parameter for judging power MOSFET device thermal performance advantages and disadvantages, so thermal resistance test is very important. In the paper, through of three thermal resistance test methods, the infrared scanning, LCD shows temperature method, standard electrical method compares the advantages and disadvantages, summed up the standard electrical test method is more suitable for MOSFET thermal resistance test. Based on according to the heat resistance test system Phase11, elaborated the principle of power MOSFET thermal resistance test, and emphatically through examples on the standard electrical method for testing resistance factors: test current Im, calibration coefficient K, reference temperature Tj and test fixture nodes were analyzed in detail, summed up the methods of reducing thermal resistance measurement error, for the thermal resistance of the exact test and device testing standards provide the basis for the development.关键词
热阻测试原理/测试电流/校准系数/参考结温/测试夹具Key words
thermal resistance testing principle/testing current/calibration coefficient/reference junction temperature/test fixture分类
信息技术与安全科学
