电子与封装Issue(6)：35-38,48,5.
MTM反熔丝单元的总剂量效应研究
The Affection of TID on MTM Anti-fuse Unit
王栩 1郑若成 1徐海铭1
作者信息
- 1. 中国电子科技集团公司第58研究所，江苏 无锡 214035
- 折叠
摘要
Abstract
The paper focused on the result of single MTM anti-fuse unit when TID (Total Ion Dose) experiment. Just like in the actually application environment, applied the different bias on the different sizes and states of MTM anti-fuse units when it is in the TID environment, and got the data trend of feature character. Then, we got the conclusion: the logic state of MTM anti-fuse unit can’t be influenced by TID.关键词
MTM/反熔丝/总剂量Key words
MTM/anti-fuse/TID分类
信息技术与安全科学引用本文复制引用
王栩,郑若成,徐海铭..MTM反熔丝单元的总剂量效应研究[J].电子与封装,2015,(6):35-38,48,5.
