电子与封装Issue(7)：24-27,4.
一种Divided RESURF高压互连结构研究
Research of Divided RESURF HVI Structure
张昕 1乔明1
作者信息
- 1. 电子科技大学电子薄膜与集成器件国家重点实验室，成都 610054
- 折叠
摘要
Abstract
High Voltage Interconnection is a key technology of Power Integrated Circuit. With the rapid rise of structures, functions and applying range of PIC comes a rapid rise of inlfuence causing by HVI. Thus, the traditional HVI structure can no longer meet the modern requirement in this ifeld. This dissertation focuses on the HVI technology and proposes a divided RESURF LDMOS, using two-dimension device simulation to complete a requirement of 600 V interconnection with optimization of its structure and concentration. The structure can be used in the power integrated circuit of 600 V application.关键词
高压互连线/击穿耐压/Divided RESURFKey words
high voltage interconnection/breakdown voltage/divided RESURF分类
信息技术与安全科学引用本文复制引用
张昕,乔明..一种Divided RESURF高压互连结构研究[J].电子与封装,2015,(7):24-27,4.
