电子元件与材料Issue(7)：77-81,5.DOI:10.3969/j.issn.1001-2028.2014.07.018
基于正交试验的芯片堆叠封装引线键合工艺研究
Research of wire bonding technology in a stacked die package based on orthogonal test
摘要
Abstract
0.203 2 mm (8 mil) Au wire was used as the bonding wire,series of orthogonal tests such as the ball formation, the pull test, and the wire tail test were performed by ultrasonic thermo compression bonding process. The effects of wire bonding parameters on the bonding qualities were systematically analyzed. Results show that the optimized process parameter windows are bonding temperature is 180℃ or 190℃, bonding power is 35 mW, bonding time is 15 ms or 20 ms, bonding pressure is 0.12 N, electronic flame off current is 3 200 mA, electronic flame off time is 350μs and tail wire length is 20μm. In various factors affecting the wire bonding quality, bonding power and bonding pressure have a significant influence on bonding qualities. Results show that the bonding areas could be damaged by too high bonding power and the wire bonding strength reduces. Defective bonding could be caused by too small bonding power. The bonding ball deformation could be caused by too large bonding pressure and the bonding strength is also reduced by too small bonding pressure.关键词
引线键合/键合功率/键合压力/系统级封装/正交试验/失效机理Key words
wire bonding/bonding power/bonding pressure/system-in-package/orthogonal test/failure mechanisms分类
信息技术与安全科学引用本文复制引用
唐宇,张鹏飞,吴志中,黄杰豪,李国元..基于正交试验的芯片堆叠封装引线键合工艺研究[J].电子元件与材料,2014,(7):77-81,5.基金项目
中央高校基本科研业务费专项资金资助项目（No.2014ZB0032）；广东省科技计划资助项目（No.2012B020313004）；广东高校优秀青年创新人才培养计划资助项目（No. LYM11077）；中国博士后科学基金面上资助项目 （）
