电子元件与材料Issue(11)：73-76,80,5.DOI:10.14106/j.cnki.1001-2028.2014.11.018
X波段高性能低噪声放大器的设计与实现
Design and implementation of an X-band high performance low noise amplifier
摘要
Abstract
An X-band (11-12 GHz) high-performance low noise amplifier (LNA) was designed and fabricated. The GaAs FET (MGF4941AL) was selected and a three-level cascade amplifier structure was adopted in the design. In order to restrain the noise and to improve the gain, the static working points of each level amplifier were calculated and set respectively. The LNA circuit was simulated by ADS, and then manufactured and tested. The results show that the noise coefficient is lower than 2 dB in workband, VSWR( input/output) is lower than 2, the power gain is above 30 dB and the gain flatness is lower than 1.5 dB. The low noise amplifier is suitable for X-band front-end of receivers.关键词
X波段/低噪声放大器/三级级联/噪声系数/VSWR/增益Key words
X-band/low noise amplifier/three-level cascade/noise coefficient/VSWR/gain分类
信息技术与安全科学引用本文复制引用
许准,周蓓,马志强,葛俊祥..X波段高性能低噪声放大器的设计与实现[J].电子元件与材料,2014,(11):73-76,80,5.基金项目
南京市“321”领军人才资助项目（No.20110112）；江苏省“六大人才高峰”资助项目（No.201201-12）；江苏省科技型企业技术创新基金资助项目 （）
