电子元件与材料Issue(12)：10-13,16,5.DOI:10.14106/j.cnki.1001-2028.2014.12.003
三氧化二钕掺杂量对低温烧结BST陶瓷介电性能的影响
Influence of Nd2O3 doping amount on the dielectric properties of BST ceramics sintered at low temperature
摘要
Abstract
The influence of Nd2O3 doping amount on material phase, microstructure and the dielectric properties of Ba0.65Sr0.35TiO3 (BST) series low temperature sintering ceramics doped with ZBS glass were investigated by the traditional solid state process. The results show that the main crystal phase of BST ceramics doped with Nd2O3 has a perovskite structure and has not the obviously secondary phase. When Nd2O3 doping amount increases, the dielectric constant of BST ceramics increases firstly and then decreases and the dielectric loss decreases firstly and then increases. The dielectric properties of BST ceramics doped with ZBS glass and with mass fraction of 1.5% of Nd2O3 and sintered at 975℃ are good:relative permittivity of 667, dielectric loss of 0.01,the change rate of capacitance is–35.2%-14.8%in the range of–30–+85℃.关键词
低温烧结/Nd2O3掺杂/钛酸锶钡/电容器陶瓷/稀土/介电性能Key words
low temperature sintering/Nd2O3 doping/barium strontium titanate/capacitor ceramics/rare earths/dielectric property分类
信息技术与安全科学引用本文复制引用
黄新友,邢仁克,郭淑婧,岳振星,陈志刚,房飞..三氧化二钕掺杂量对低温烧结BST陶瓷介电性能的影响[J].电子元件与材料,2014,(12):10-13,16,5.基金项目
新型陶瓷与精细工艺国家重点实验室资助项目（No.KF201411）；江苏大学第13批大学生科研立项资助项目（No.13A426）；广东省教育部产学研结合资助项目 （）
