电子元件与材料Issue(6)：23-27,5.DOI:10.14106/j.cnki.1001-2028.2015.06.007
β-FeSi2（n）/c-Si（p）HIT型太阳能电池的模拟与优化
Simulation and optimization of β-FeSi2(n)/c-Si(p) solar cell with intrinsic thin-layer
聂慧军 1刘淑平 1吕雁文 1杨大洋1
作者信息
- 1. 太原科技大学 物理系，山西 太原 030024
- 折叠
摘要
Abstract
The performance of β-FeSi2(n)/c-Si(p) HIT solar cell was simulated by using the afors-het. At the same time, the influences of the intrinsic layer, an emission layer, and the interface states on the battery performance were discussed. The results show that, the performance of battery is improved after adding the intrinsic layer. However, with the increasing of the intrinsic layer thickness, carrier collection rate decreases and the series resistance increases so that the photoelectric conversion efficiency of cell decreases. Increasing the thickness of the emission layer makes the collection rate of carrier decrease, causing that the photoelectric conversion efficiency reduces. Although the increasing of emission layer doping concentration leads to increasing of built-in electric field intensity, the carrier compound increases simultaneously. So the battery performance remains stable. Interface states degrade battery performance, so the density of interface states should be less than 1011cm–2·eV–1 in order to obtain the better performance for the cell. By optimizing the various parameters of the cell, the photoelectricconversion efficiency of β-FeSi2(n)/a-Si(i)/c-Si(p) solar cell can reach 17.00%.关键词
β-FeSi2/环保型材料/HIT型太阳能电池/本征层/界面态密度/afors-hetKey words
β-FeSi2/environment-friendly materials/HIT type solar cell/intrinsic layer/interface states density/afors-het分类
信息技术与安全科学引用本文复制引用
聂慧军,刘淑平,吕雁文,杨大洋..β-FeSi2（n）/c-Si（p）HIT型太阳能电池的模拟与优化[J].电子元件与材料,2015,(6):23-27,5.
